Prof Dr Jasmin Aghassi-Hagmann

Offenburg University of Applied Sciences, Germany; Karlsruhe Institute of Technology, Germany

Printable Low Power Circuits based on Metal Oxides

Abstract :

Printed electronic circuitry based on electrolyte-gated field effect transistors with an inorganic oxide channel material hold promise for low power circuits for applications areas such as wearables, IoT, security keys or sensors. In this talk digital circuits as well as memory devices and others based on transistor-resistor logic will be discussed. Performance limitations defined by the device technology as well as device capacitances are characterized and new routing concepts proposed. In addition hybrid circuits containing a printed core as well as silicon devices for security applications will be demonstrated for the case of a printable, physical unclonable function (PUF) circuit.

Bio :

Jasmin Aghassi graduated in physics from the RWTH Aachen and received her PhD. from Karlsruhe University. In 2007 she joined Infineon Technologies in Munich focusing on CMOS low power development for wireless applications. During that time she worked as modeling and device expert for the IBM Semiconductor Alliance in East Fishkill, USA. In 2011 she moved on to Intel Mobile Communications as a Platform Technology Manager for 28 nm CMOS technology. She joined KIT in 2012 as a group leader for Low Power Electronics with Advanced Materials and was additionally appointed in 2013 as a full professor in electrical engineering at Offenburg University of Applied Sciences.